PC
NTE Electronics, IncTO-218-3RoHS

NTE2301

TRANS NPN 750V 5A TO218

NTE2301 by NTE Electronics, Inc
Subcategory

Transistors Bipolar Bjt Single

Package

TO-218-3

Status

Active

$5.69 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNTE Electronics, Inc
ModelNTE2301
Package / CaseTO-218-3
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power Dissipation (Max)100 W
Supplier Device PackageTO-218
RoHSRoHS
Part StatusActive

Application & Notes

NTE2301 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-218-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max100 W
Transistor TypeNPN
Frequency - Transition4MHz
Vce Saturation (Max) @ Ib, Ic5V @ 1.8A, 4.5A
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max)1mA
Voltage - Collector Emitter Breakdown (Max)750 V

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