PC
Rochester Electronics, LLCTO-251-3 Short Leads, IPak, TO-251AARoHS

NTD85N02R-1G

MOSFET N-CH 24V 12A/85A IPAK

NTD85N02R-1G by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Status

Obsolete

$0.27 / unit (market reference)

MOQ: 1110 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelNTD85N02R-1G
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)24 V
Rds On (Max)5.2mOhm @ 20A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)17.7 nC @ 5 V
Input Capacitance (Ciss)2050 pF @ 20 V
Power Dissipation (Max)1.25W (Ta), 78.1W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageI-PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTD85N02R-1G by Rochester Electronics, LLC is an N-channel power MOSFET rated at 24 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.2mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Power Dissipation (Max)1.25W (Ta), 78.1W (Tc)
Gate Charge (Qg) (Max) @ Vgs17.7 nC @ 5 V
Drain to Source Voltage (Vdss)24 V
Input Capacitance (Ciss) (Max) @ Vds2050 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 85A (Tc)

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