PC
Rochester Electronics, LLCTO-251-3 Short Leads, IPak, TO-251AARoHS

NTD4302-1G

MOSFET N-CH 30V 8.4A/68A IPAK

NTD4302-1G by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Status

Obsolete

$0.22 / unit (market reference)

MOQ: 1374 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelNTD4302-1G
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)10mOhm @ 20A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)80 nC @ 10 V
Input Capacitance (Ciss)2400 pF @ 24 V
Power Dissipation (Max)1.04W (Ta), 75W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageI-PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTD4302-1G by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs10mOhm @ 20A, 10V
Power Dissipation (Max)1.04W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 24 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 68A (Tc)

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