SIC MOS WAFER SALES 40MOHM 1200V

Transistors Fets Mosfets Single
Die
Active
$18.93 / unit (market reference)
MOQ: 17 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTC040N120SC1 |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 56mOhm @ 35A, 20V |
| Vgs(th) (Max) | 4.3V @ 10mA |
| Gate Charge (Qg) | 106 nC @ 20 V |
| Input Capacitance (Ciss) | 1781 pF @ 800 V |
| Power Dissipation (Max) | 348W (Tc) |
| Drive Voltage | 20V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
NTC040N120SC1 by onsemi is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 56mOhm @ 35A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | N-Channel |
| Vgs (Max) | +25V, -15V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 35A, 20V |
| Power Dissipation (Max) | 348W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1781 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
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