NTBG020N090SC1
SICFET N-CH 900V 9.8A/112A D2PAK
Transistors Fets Mosfets Single
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Active
$32.60 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTBG020N090SC1 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 900 V |
| Rds On (Max) | 28mOhm @ 60A, 15V |
| Vgs(th) (Max) | 4.3V @ 20mA |
| Gate Charge (Qg) | 200 nC @ 15 V |
| Input Capacitance (Ciss) | 4415 pF @ 450 V |
| Power Dissipation (Max) | 3.7W (Ta), 477W (Tc) |
| Drive Voltage | 15V |
| Supplier Device Package | D2PAK-7 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTBG020N090SC1 by onsemi is an N-channel power MOSFET rated at 900 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 28mOhm @ 60A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTBG020N090SC1
Alternatives & Replacements
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900V 120M AUTOMOTIVE SIC MOSFET
SCT3105KW7TL
SICFET N-CH 1200V 23A TO263-7
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +19V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 60A, 15V |
| Power Dissipation (Max) | 3.7W (Ta), 477W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 900 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4415 pF @ 450 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta), 112A (Tc) |
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