NGTB30N60IHLWG
IGBT 600V 30A TO247
Transistors Igbts Single
TO-247-3
Obsolete
$2.16 / unit (market reference)
MOQ: 139 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NGTB30N60IHLWG |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 250 W |
| Supplier Device Package | TO-247-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NGTB30N60IHLWG by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NGTB30N60IHLWG
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 130 nC |
| Power - Max | 250 W |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Switching Energy | 280µJ (off) |
| Td (on/off) @ 25°C | 70ns/140ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Reverse Recovery Time (trr) | 400 ns |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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