NESG2101 - NPN SIGE RF TRANSISTO
Transistors Bipolar Bjt Rf
SOT-343F
Obsolete
$0.50 / unit (market reference)
MOQ: 601 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NESG2101M05-T1-A |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 500mW |
| Supplier Device Package | M05 |
| RoHS | RoHS |
| Part Status | Obsolete |
NESG2101M05-T1-A by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-343F package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
RF TRANS NPN 12V 10GHZ 4MCPH
SAME AS 2SC5508 NPN SILICON AMPL
RF TRANS NPN 2.8V 55GHZ 4DFP
RF TRANS NPN 12V 10GHZ 4MCPH
SMALL SIGNAL BIPOLAR TRANSISTOR
RF TRANS NPN 5.5V 18GHZ 4DFP
| Gain | 11dB ~ 19dB |
| Power - Max | 500mW |
| Transistor Type | NPN |
| Frequency - Transition | 17GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
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