NE85630-T1
RF TRANS NPN 12V 4.5GHZ SOT323

Transistors Bipolar Bjt Rf
SC-70, SOT-323
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | CEL |
| Model | NE85630-T1 |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 150mW |
| Supplier Device Package | SOT-323 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NE85630-T1 by CEL is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NE85630-T1
Alternatives & Replacements
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BFQ67W,115
RF TRANS NPN 10V 8GHZ SOT323-3
2SC4228-T1-A
RF 0.035A, ULTRA HIGH FREQ BAND
2SC4853A-4-TL-E
RF TRANS NPN 6V 5GHZ 3MCP
BFS25A,115
RF TRANS NPN 5V 5GHZ SOT323-3
NSVF2250WT1G
RF TRANS NPN 15V SC70-3
All Technical Specifications
| Gain | 6dB ~ 12dB |
| Power - Max | 150mW |
| Transistor Type | NPN |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA, 3V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
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