NDM3000
SMALL SIGNAL P-CHANNEL MOSFET
Transistors Fets Mosfets Arrays
16-SOIC (0.154", 3.90mm Width)
Obsolete
$1.60 / unit (market reference)
MOQ: 188 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NDM3000 |
| Package / Case | 16-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 3 N and 3 P-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 90mOhm @ 3A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 25nC @ 10V |
| Input Capacitance (Ciss) | 360pF @ 10V |
| Power Dissipation (Max) | 1.4W |
| Supplier Device Package | 16-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NDM3000 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 16-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NDM3000
Alternatives & Replacements
View All →ALD110800ASCL
MOSFET 4N-CH 10.6V 16SOIC
ALD114835SCL
MOSFET 4N-CH 10.6V 16SOIC
ALD310708SCL
MOSFET 4 P-CH 8V 16SOIC
ALD210800ASCL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD110814SCL
MOSFET 4N-CH 10.6V 16SOIC
ALD210800SCL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
All Technical Specifications
| FET Type | 3 N and 3 P-Channel (3-Phase Bridge) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.4W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
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