NDH8502P
P-CHANNEL MOSFET
Transistors Fets Mosfets Arrays
8-TSOP (0.130", 3.30mm Width)
Active
$0.59 / unit (market reference)
MOQ: 507 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NDH8502P |
| Package / Case | 8-TSOP (0.130", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 110mOhm @ 2.2A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 14.5nC @ 10V |
| Input Capacitance (Ciss) | 340pF @ 15V |
| Power Dissipation (Max) | 800mW (Ta) |
| Supplier Device Package | SuperSOT™-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NDH8502P by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSOP (0.130", 3.30mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 110mOhm @ 2.2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NDH8502P
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
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