MT3S111P(TE12L,F)
RF TRANS NPN 6V 8GHZ PW-MINI
Transistors Bipolar Bjt Rf
TO-243AA
Active
$0.89 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | MT3S111P(TE12L,F) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | PW-MINI |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MT3S111P(TE12L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MT3S111P(TE12L,F)
Alternatives & Replacements
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SAME AS 2SC5336 NPN SILICON AMPL
MT3S113P(TE12L,F)
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All Technical Specifications
| Gain | 10.5dB |
| Power - Max | 1W |
| Transistor Type | NPN |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
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