SMALL SIGNAL BIPOLAR TRANSISTOR

Transistors Bipolar Bjt Single
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Active
$0.06 / unit (market reference)
MOQ: 4808 pcs
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| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | MPSA14D26Z |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625 mW |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Active |
MPSA14D26Z by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
0.15A, 50V, PNP, TO-92
0.15A, 50V, PNP, TO-92
0.1A, 50V, NPN, TO-92
SMALL SIGNAL BIPOLAR TRANSISTOR,
SMALL SIGNAL BIPOLAR TRANSISTOR
SMALL SIGNAL BIPOLAR TRANSISTOR,
| Power - Max | 625 mW |
| Transistor Type | NPN - Darlington |
| Frequency - Transition | 125MHz |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector (Ic) (Max) | 1.2 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
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