MJE182
T-NPN SI- AF PO
Transistors Bipolar Bjt Single
TO-225AA, TO-126-3
Active
$0.80 / unit (market reference)
MOQ: 5 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | MJE182 |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 12.5 W |
| Supplier Device Package | SOT-32-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MJE182 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-225AA, TO-126-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MJE182
Alternatives & Replacements
View All →KSB772YSTU
SMALL SIGNAL BIPOLAR TRANSISTOR,
BD681STU-ON
POWER BIPOLAR TRANSISTOR
MJE182STU
POWER BIPOLAR TRANSISTOR
2SB1143S
TRANS PNP 50V 4A TO-126ML
KSD882YS
SMALL SIGNAL BIPOLAR TRANSISTOR,
MJE200G
TRANS NPN 40V 5A TO225AA
All Technical Specifications
| Power - Max | 12.5 W |
| Transistor Type | NPN |
| Frequency - Transition | 50MHz |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
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