MBT35200MT1G
TRANS PNP 35V 2A 6TSOP
Transistors Bipolar Bjt Single
SOT-23-6 Thin, TSOT-23-6
Active
$0.48 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | MBT35200MT1G |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625 mW |
| Supplier Device Package | 6-TSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MBT35200MT1G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MBT35200MT1G
Alternatives & Replacements
View All →CPH6153-P-TL-E
TRANS PNP 20V 3A CPH6
NSS35200MR6T1G
TRANS PNP 35V 2A 6TSOP
MBT35200MT2G
TRANS PNP 35V 2A 6-TSOP
FMBA56
SMALL SIGNAL BIPOLAR TRANSISTOR,
NSS20201MR6T1G
TRANS NPN 20V 2A 6TSOP
MBT35200MT1
TRANS SW PNP BIPOL 35V 2A TSOP-6
All Technical Specifications
| Power - Max | 625 mW |
| Transistor Type | PNP |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
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