Linear Integrated Systems, Inc.8-SOIC (0.154", 3.90mm Width)RoHS
LS830 SOIC 8L
ULTRA LOW LEAKAGE, LOW DRIFT, MO
Category
Subcategory
Transistors Jfets
Package
8-SOIC (0.154", 3.90mm Width)
Series
LS830
Status
Active
Datasheet
$10.69 / unit (market reference)
MOQ: 10 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Linear Integrated Systems, Inc. |
| Model | LS830 SOIC 8L |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) | 3pF @ 10V |
| Power Dissipation (Max) | 500 mW |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
LS830 SOIC 8L by Linear Integrated Systems, Inc. is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for LS830 SOIC 8L
Alternatives & Replacements
View All →Linear Integrated Systems, Inc.Stock8-SOIC (0.154", 3.90mm Width)
LS5912 SOIC 8L-B
WIDEBAND, HIGH GAIN, MONOLITHIC
Request QuoteRFQ →
Linear Integrated Systems, Inc.Stock8-SOIC (0.154", 3.90mm Width)
SST401 SOIC 8L
LOW NOISE, LOW DRIFT, MONOLITHIC
Request QuoteRFQ →
Linear Integrated Systems, Inc.Stock8-SOIC (0.154", 3.90mm Width)
SST440 SOIC 8L
WIDEBAND, HIGH GAIN, MONOLITHIC
Request QuoteRFQ →
Linear Integrated Systems, Inc.Stock8-SOIC (0.154", 3.90mm Width)
LS5912 SOIC 8L-A
WIDEBAND, HIGH GAIN, MONOLITHIC
Request QuoteRFQ →
Linear Integrated Systems, Inc.Stock8-SOIC (0.154", 3.90mm Width)
LS5911 SOIC 8L-A
WIDEBAND, HIGH GAIN, MONOLITHIC
Request QuoteRFQ →
Linear Integrated Systems, Inc.Stock8-SOIC (0.154", 3.90mm Width)
LSK389D SOIC 8L
LOW NOISE, MONOLITHIC DUAL, N-CH
Request QuoteRFQ →
All Technical Specifications
| FET Type | 2 N-Channel |
| Power - Max | 500 mW |
| Drain to Source Voltage (Vdss) | 40 V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
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