JFE2140DR
DUAL, ULTRA-LOW NOISE, LOW GATE
Transistors Jfets
8-SOIC (0.154", 3.90mm Width)
Active
$4.61 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | JFE2140DR |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) | 13pF @ 5V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
JFE2140DR by Texas Instruments is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for JFE2140DR
Alternatives & Replacements
View All →LS5912 SOIC 8L-B
WIDEBAND, HIGH GAIN, MONOLITHIC
SST401 SOIC 8L
LOW NOISE, LOW DRIFT, MONOLITHIC
SST440 SOIC 8L
WIDEBAND, HIGH GAIN, MONOLITHIC
LS5912 SOIC 8L-A
WIDEBAND, HIGH GAIN, MONOLITHIC
LS5911 SOIC 8L-A
WIDEBAND, HIGH GAIN, MONOLITHIC
LSK389D SOIC 8L
LOW NOISE, MONOLITHIC DUAL, N-CH
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| Current Drain (Id) - Max | 50 mA |
| Drain to Source Voltage (Vdss) | 40 V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
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