IXYT30N65C3H1HV
IGBT 650V 60A 270W TO268HV
Transistors Igbts Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
GenX3™, XPT™
Active
$8.72 / unit (market reference)
MOQ: 300 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXYT30N65C3H1HV |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 270 W |
| Supplier Device Package | TO-268AA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXYT30N65C3H1HV by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXYT30N65C3H1HV
Alternatives & Replacements
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IGBT
IXGT32N120A3
IGBT 1200V 75A 300W TO268
All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 44 nC |
| Power - Max | 270 W |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Switching Energy | 1mJ (on), 270µJ (off) |
| Td (on/off) @ 25°C | 21ns/75ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Reverse Recovery Time (trr) | 120 ns |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 118 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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