IXYT20N120C3D1HV
IGBT
Transistors Igbts Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
XPT™, GenX3™
Active
$8.89 / unit (market reference)
MOQ: 300 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXYT20N120C3D1HV |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 230 W |
| Supplier Device Package | TO-268HV (IXYT) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXYT20N120C3D1HV by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXYT20N120C3D1HV
Alternatives & Replacements
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IGBT FIELDSTOP COMBI 600V 20A TO
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IGBT
IXGT32N120A3
IGBT 1200V 75A 300W TO268
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 53 nC |
| Power - Max | 230 W |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Switching Energy | 1.3mJ (on), 1mJ (off) |
| Td (on/off) @ 25°C | 20ns/90ns |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Reverse Recovery Time (trr) | 29 ns |
| Current - Collector (Ic) (Max) | 36 A |
| Current - Collector Pulsed (Icm) | 88 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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