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IXYSTO-264-3, TO-264AARoHS

IXYB82N120C3H1

IGBT 1200V 164A 1040W PLUS264

IXYB82N120C3H1 by IXYS
Subcategory

Transistors Igbts Single

Package

TO-264-3, TO-264AA

Series

GenX3™, XPT™

Status

Active

$26.41 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXYB82N120C3H1
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)1040 W
Supplier Device PackagePLUS264™
RoHSRoHS
Part StatusActive

Application & Notes

IXYB82N120C3H1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-264-3, TO-264AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

Input TypeStandard
Gate Charge215 nC
Power - Max1040 W
Test Condition600V, 80A, 2Ohm, 15V
Switching Energy4.95mJ (on), 2.78mJ (off)
Td (on/off) @ 25°C29ns/192ns
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 82A
Reverse Recovery Time (trr)420 ns
Current - Collector (Ic) (Max)164 A
Current - Collector Pulsed (Icm)320 A
Voltage - Collector Emitter Breakdown (Max)1200 V

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