IXYSTO-220-3RoHS
IXTP6N50D2
MOSFET N-CH 500V 6A TO220AB
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3
Series
Depletion
Status
Active
$7.09 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTP6N50D2 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Rds On (Max) | 500mOhm @ 3A, 0V |
| Gate Charge (Qg) | 96 nC @ 5 V |
| Input Capacitance (Ciss) | 2800 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTP6N50D2 by IXYS is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 500mOhm @ 3A, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 3A, 0V |
| Power Dissipation (Max) | 300W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
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