IXYSTO-220-3RoHS
IXTP26P10T
MOSFET P-CH 100V 26A TO220AB
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3
Series
TrenchP™
Status
Active
$2.65 / unit (market reference)
MOQ: 300 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTP26P10T |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 90mOhm @ 13A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 52 nC @ 10 V |
| Input Capacitance (Ciss) | 3820 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTP26P10T by IXYS is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 13A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3820 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
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