IXST30N60B
IGBT 600V 55A 200W TO268
Transistors Igbts Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXST30N60B |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 200 W |
| Supplier Device Package | TO-268AA |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXST30N60B by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXST30N60B
Alternatives & Replacements
View All →IXGT32N170-TRL
IGBT 1700V 75A 350W TO268
APT75GN60SDQ2G
IGBT FIELDSTOP COMBI 600V 75A TO
IXBT12N300HV
IGBT 3000V 30A 160W TO268
APT20GN60SDQ2G
IGBT FIELDSTOP COMBI 600V 20A TO
IXYT30N450HV
IGBT
IXGT32N120A3
IGBT 1200V 75A 300W TO268
All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 100 nC |
| Power - Max | 200 W |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Switching Energy | 1.5mJ (off) |
| Td (on/off) @ 25°C | 30ns/150ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 55 A |
| Current - Collector Pulsed (Icm) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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