IXYSTO-3P-3, SC-65-3RoHS
IXSQ20N60B2D1
IGBT 600V 35A 190W TO3P
Category
Subcategory
Transistors Igbts Single
Package
TO-3P-3, SC-65-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXSQ20N60B2D1 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 190 W |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXSQ20N60B2D1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 33 nC |
| Power - Max | 190 W |
| Switching Energy | 380µJ (off) |
| Td (on/off) @ 25°C | 30ns/116ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 16A |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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