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IXYS-RF16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed PadRoHS

IXRFSM12N100

MOSFET N-CH 1000V 12A 16SMPD

Subcategory

Transistors Fets Mosfets Single

Package

16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad

Series

SMPD

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS-RF
ModelIXRFSM12N100
Package / Case16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1000 V
Rds On (Max)1.05Ohm @ 6A, 15V
Vgs(th) (Max)5.5V @ 250µA
Gate Charge (Qg)77 nC @ 10 V
Input Capacitance (Ciss)2875 pF @ 800 V
Power Dissipation (Max)940W
Drive Voltage15V
Supplier Device Package16-SMPD
RoHSRoHS
Part StatusObsolete

Application & Notes

IXRFSM12N100 by IXYS-RF is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.05Ohm @ 6A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 250µA
Rds On (Max) @ Id, Vgs1.05Ohm @ 6A, 15V
Power Dissipation (Max)940W
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Drain to Source Voltage (Vdss)1000 V
Input Capacitance (Ciss) (Max) @ Vds2875 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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