IXYS-RF16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed PadRoHS
IXRFSM12N100
MOSFET N-CH 1000V 12A 16SMPD
.jpg)
Category
Subcategory
Transistors Fets Mosfets Single
Package
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Series
SMPD
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS-RF |
| Model | IXRFSM12N100 |
| Package / Case | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1000 V |
| Rds On (Max) | 1.05Ohm @ 6A, 15V |
| Vgs(th) (Max) | 5.5V @ 250µA |
| Gate Charge (Qg) | 77 nC @ 10 V |
| Input Capacitance (Ciss) | 2875 pF @ 800 V |
| Power Dissipation (Max) | 940W |
| Drive Voltage | 15V |
| Supplier Device Package | 16-SMPD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXRFSM12N100 by IXYS-RF is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.05Ohm @ 6A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXRFSM12N100
Alternatives & Replacements
View All →Rochester Electronics, LLCStock6-UDFN Exposed Pad
PMPB27EP,115
30 V, SINGLE P-CHANNEL TRENCH MO
Request QuoteRFQ →
Rochester Electronics, LLCStock-
PMXB65UPE147
P-CHANNEL MOSFET
Request QuoteRFQ →
Rochester Electronics, LLCStock-
NXS7002AK215
SMALL SIGNAL FET
Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA
BSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4
Request QuoteRFQ →
Rochester Electronics, LLCStock-
UPA2351T1G(2)-E4-A
POWER FIELD-EFFECT TRANSISTOR
Request QuoteRFQ →
Rochester Electronics, LLCStock-
RJK0397DPA-0G#J7A
POWER TRANSISTOR, MOSFET
Request QuoteRFQ →
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 15V |
| Power Dissipation (Max) | 940W |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2875 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.