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IXYSTO-247-3RoHS

IXFX230N20T

MOSFET N-CH 200V 230A PLUS247-3

IXFX230N20T by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

HiPerFET™, Trench

Status

Active

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_mosfets/littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_230n20t_datasheet.pdf.pdf

$23.18 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFX230N20T
Package / CaseTO-247-3
Mounting TypeThrough Hole
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)7.5mOhm @ 60A, 10V
Vgs(th) (Max)5V @ 8mA
Gate Charge (Qg)378 nC @ 10 V
Input Capacitance (Ciss)28000 pF @ 25 V
Power Dissipation (Max)1670W (Tc)
Drive Voltage10V
Supplier Device PackagePLUS247™-3
RoHSRoHS
Part StatusActive

Application & Notes

IXFX230N20T by IXYS is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.5mOhm @ 60A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 8mA
Rds On (Max) @ Id, Vgs7.5mOhm @ 60A, 10V
Power Dissipation (Max)1670W (Tc)
Gate Charge (Qg) (Max) @ Vgs378 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds28000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C230A (Tc)

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