IXFN26N90
MOSFET N-CH 900V 26A SOT-227B
Transistors Fets Mosfets Single
SOT-227-4, miniBLOC
HiPerFET™
Not For New Designs
$29.85 / unit (market reference)
MOQ: 10 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFN26N90 |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 900 V |
| Rds On (Max) | 300mOhm @ 13A, 10V |
| Vgs(th) (Max) | 5V @ 8mA |
| Gate Charge (Qg) | 240 nC @ 10 V |
| Input Capacitance (Ciss) | 10800 pF @ 25 V |
| Power Dissipation (Max) | 600W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | SOT-227B |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
IXFN26N90 by IXYS is an N-channel power MOSFET rated at 900 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXFN26N90
Alternatives & Replacements
View All →IXTN200N10L2
MOSFET N-CH 100V 178A SOT227B
G3R20MT12N
SIC MOSFET N-CH 105A SOT227
IXFN66N85X
MOSFET N-CH 850V 65A SOT227B
MSC025SMA120J
SICFET N-CH 1.2KV 77A SOT227
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
IXFN82N60Q3
MOSFET N-CH 600V 66A SOT227B
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 13A, 10V |
| Power Dissipation (Max) | 600W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 900 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
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