IXBT20N360HV
IGBT 3600V 70A TO-268HV
Transistors Igbts Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
BIMOSFET™
Not For New Designs
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXBT20N360HV |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 430 W |
| Supplier Device Package | TO-268AA |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
IXBT20N360HV by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXBT20N360HV
Alternatives & Replacements
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IGBT 1700V 75A 350W TO268
APT75GN60SDQ2G
IGBT FIELDSTOP COMBI 600V 75A TO
IXBT12N300HV
IGBT 3000V 30A 160W TO268
APT20GN60SDQ2G
IGBT FIELDSTOP COMBI 600V 20A TO
IXYT30N450HV
IGBT
IXGT32N120A3
IGBT 1200V 75A 300W TO268
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 110 nC |
| Power - Max | 430 W |
| Test Condition | 1500V, 20A, 10Ohm, 15V |
| Switching Energy | 15.5mJ (on), 4.3mJ (off) |
| Td (on/off) @ 25°C | 18ns/238ns |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Reverse Recovery Time (trr) | 1.7 µs |
| Current - Collector (Ic) (Max) | 70 A |
| Current - Collector Pulsed (Icm) | 220 A |
| Voltage - Collector Emitter Breakdown (Max) | 3600 V |
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