InventchipTO-247-4RoHS
IV1Q12160T4
SIC MOSFET, 1200V 160MOHM, TO-24
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-4
Status
Active
$19.64 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Inventchip |
| Model | IV1Q12160T4 |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 195mOhm @ 10A, 20V |
| Vgs(th) (Max) | 2.9V @ 1.9mA |
| Gate Charge (Qg) | 43 nC @ 20 V |
| Input Capacitance (Ciss) | 885 pF @ 800 V |
| Power Dissipation (Max) | 138W (Tc) |
| Drive Voltage | 20V |
| Supplier Device Package | TO-247-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IV1Q12160T4 by Inventchip is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 195mOhm @ 10A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -5V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs(th) (Max) @ Id | 2.9V @ 1.9mA |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 10A, 20V |
| Power Dissipation (Max) | 138W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 885 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.