PC
Infineon TechnologiesTO-236-3, SC-59, SOT-23-3RoHS

ISS55EP06LMXTSA1

MOSFET P-CH 60V 180MA SOT23-3

ISS55EP06LMXTSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

OptiMOS™

Status

Active

$0.40 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelISS55EP06LMXTSA1
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)5.5Ohm @ 180mA, 10V
Vgs(th) (Max)2V @ 11µA
Gate Charge (Qg)0.59 nC @ 10 V
Input Capacitance (Ciss)18 pF @ 30 V
Power Dissipation (Max)400mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-SOT23-3-5
RoHSRoHS
Part StatusActive

Application & Notes

ISS55EP06LMXTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.5Ohm @ 180mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 11µA
Rds On (Max) @ Id, Vgs5.5Ohm @ 180mA, 10V
Power Dissipation (Max)400mW (Ta)
Gate Charge (Qg) (Max) @ Vgs0.59 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds18 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C180mA (Ta)

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