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Vishay SiliconixTO-262-3 Long Leads, I²Pak, TO-262AARoHS

IRL3102L

MOSFET N-CH 20V 61A TO262-3

IRL3102L by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Status

Discontinued at Digi-Key

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandVishay Siliconix
ModelIRL3102L
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)13mOhm @ 37A, 7V
Vgs(th) (Max)700mV @ 250µA
Gate Charge (Qg)58 nC @ 4.5 V
Input Capacitance (Ciss)2500 pF @ 15 V
Power Dissipation (Max)89W (Tc)
Drive Voltage4.5V, 7V
Supplier Device PackageTO-262-3
RoHSRoHS
Part StatusDiscontinued at Digi-Key

Application & Notes

IRL3102L by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 37A, 7V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id700mV @ 250µA
Rds On (Max) @ Id, Vgs13mOhm @ 37A, 7V
Power Dissipation (Max)89W (Tc)
Gate Charge (Qg) (Max) @ Vgs58 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V
Current - Continuous Drain (Id) @ 25°C61A (Tc)

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