Infineon TechnologiesTO-3P-3 Full PackRoHS
IRGP50B60PD1-EP
IGBT NPT 600V 75A TO247AD
Category
Subcategory
Transistors Igbts Single
Package
TO-3P-3 Full Pack
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRGP50B60PD1-EP |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 390 W |
| Supplier Device Package | TO-247AD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRGP50B60PD1-EP by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 205 nC |
| Power - Max | 390 W |
| Test Condition | 390V, 33A, 3.3Ohm, 15V |
| Switching Energy | 255µJ (on), 375µJ (off) |
| Td (on/off) @ 25°C | 30ns/130ns |
| Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 50A |
| Reverse Recovery Time (trr) | 42 ns |
| Current - Collector (Ic) (Max) | 75 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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