IGBT, 120A I(C), 1200V V(BR)CES,

Transistors Igbts Single
TO-247-3
Active
$8.76 / unit (market reference)
MOQ: 35 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRG7PSH54K10DPBF |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 520 W |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| RoHS | RoHS |
| Part Status | Active |
IRG7PSH54K10DPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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N-CHANNEL IGBT
| Input Type | Standard |
| Gate Charge | 435 nC |
| Power - Max | 520 W |
| Test Condition | 600V, 50A, 5Ohm, 15V |
| Switching Energy | 4.8mJ (on), 2.8mJ (off) |
| Td (on/off) @ 25°C | 110ns/490ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| Reverse Recovery Time (trr) | 170 ns |
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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