IRG7PH35UD-EP
IGBT 1200V 50A COPAK247
Transistors Igbts Single
TO-247-3
Obsolete
Price available on request
MOQ: 400 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRG7PH35UD-EP |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 180 W |
| Supplier Device Package | TO-247AD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRG7PH35UD-EP by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRG7PH35UD-EP
Alternatives & Replacements
View All →IRG7PH35UD1-EP
IGBT W/ULTRA-LOW VF DIODE FOR IN
NGTB40N60IHLWG
IGBT 600V 40A TO247
NGTB20N120IHWG
IGBT 20A 1200V TO-247
IRG7PH35UD1MPBF
IGBT W/ULTRA-LOW VF DIODE FOR IN
IRGP4263DPBF
IGBT W/ULTRAFAST SOFT RECOVERY D
FGH20N6S2D
N-CHANNEL IGBT
All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 85 nC |
| Power - Max | 180 W |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Switching Energy | 1.06mJ (on), 620µJ (off) |
| Td (on/off) @ 25°C | 30ns/160ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Reverse Recovery Time (trr) | 105 ns |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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