IRG4BC10UDPBF
IGBT 600V 8.5A 38W TO220AB
Transistors Igbts Single
TO-220-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRG4BC10UDPBF |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 38 W |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRG4BC10UDPBF by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRG4BC10UDPBF
Alternatives & Replacements
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IRGB4B60KD1PBF
IRGB4B60K - IGBT WITH ULTRAFAST
SGP40N60UFTU
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SGP10N60A
IGBT, 20A, 600V, N-CHANNEL
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 15 nC |
| Power - Max | 38 W |
| Test Condition | 480V, 5A, 100Ohm, 15V |
| Switching Energy | 140µJ (on), 120µJ (off) |
| Td (on/off) @ 25°C | 40ns/87ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 5A |
| Reverse Recovery Time (trr) | 28 ns |
| Current - Collector (Ic) (Max) | 8.5 A |
| Current - Collector Pulsed (Icm) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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