4.6A 200V 0.800 OHM N-CHANNEL
Transistors Fets Mosfets Single
TO-251-3 Short Leads, IPak, TO-251AA
Active
$0.80 / unit (market reference)
MOQ: 375 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRFU220 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 800mOhm @ 2.9A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 14 nC @ 10 V |
| Input Capacitance (Ciss) | 260 pF @ 25 V |
| Supplier Device Package | TO-251AA |
| RoHS | RoHS |
| Part Status | Active |
IRFU220 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 800mOhm @ 2.9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
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