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Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IRFS17N20DTRRP

MOSFET N-CH 200V 16A D2PAK

IRFS17N20DTRRP by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

HEXFET®

Status

Obsolete

Datasheet

View Datasheet ↗

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRFS17N20DTRRP
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)170mOhm @ 9.8A, 10V
Vgs(th) (Max)5.5V @ 250µA
Gate Charge (Qg)50 nC @ 10 V
Input Capacitance (Ciss)1100 pF @ 25 V
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

IRFS17N20DTRRP by Infineon Technologies is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 170mOhm @ 9.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IRFS17N20DTRRP

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 250µA
Rds On (Max) @ Id, Vgs170mOhm @ 9.8A, 10V
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)

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