IRFIB41N15DPBF
HEXFET N-CHANNEL POWER MOSFET
Transistors Fets Mosfets Single
TO-220-3 Full Pack
HEXFET®
Active
$1.14 / unit (market reference)
MOQ: 264 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRFIB41N15DPBF |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 150 V |
| Rds On (Max) | 45mOhm @ 25A, 10V |
| Vgs(th) (Max) | 5.5V @ 250µA |
| Gate Charge (Qg) | 110 nC @ 10 V |
| Input Capacitance (Ciss) | 2520 pF @ 25 V |
| Power Dissipation (Max) | 48W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220AB Full-Pak |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFIB41N15DPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFIB41N15DPBF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| Power Dissipation (Max) | 48W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
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