IRFD123PBF
MOSFET N-CH 100V 1.3A 4DIP
Transistors Fets Mosfets Single
4-DIP (0.300", 7.62mm)
Active
$1.45 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | IRFD123PBF |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 270mOhm @ 780mA, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 16 nC @ 10 V |
| Input Capacitance (Ciss) | 360 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | 4-HVMDIP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFD123PBF by Vishay Siliconix is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 270mOhm @ 780mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFD123PBF
Alternatives & Replacements
View All →IRFD113
MOSFET N-CH 60V 800MA 4DIP
IRFD110
1A, 100V, 0.600 OHM, N-CHANNEL
IRFD9120
MOSFET P-CH 100V 1A 4DIP
IRFD123
MOSFET N-CH 100V 1.3A 4DIP
IRFD9123
MOSFET P-CH 100V 1A 4DIP
IRFD9110
0.7A 100V 1.200 OHM P-CHANNEL
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
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