IRF9Z24NSTRLPBF
MOSFET P-CH 55V 12A D2PAK
Transistors Fets Mosfets Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HEXFET®
Not For New Designs
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRF9Z24NSTRLPBF |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 175mOhm @ 7.2A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 19 nC @ 10 V |
| Input Capacitance (Ciss) | 350 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | D2PAK |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
IRF9Z24NSTRLPBF by Infineon Technologies is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 175mOhm @ 7.2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF9Z24NSTRLPBF
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 7.2A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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