IRF7756
MOSFET 2P-CH 12V 4.3A 8-TSSOP
Transistors Fets Mosfets Arrays
8-TSSOP (0.173", 4.40mm Width)
HEXFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRF7756 |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) | 40mOhm @ 4.3A, 4.5V |
| Vgs(th) (Max) | 900mV @ 250µA |
| Gate Charge (Qg) | 18nC @ 4.5V |
| Input Capacitance (Ciss) | 1400pF @ 10V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | 8-TSSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRF7756 by Infineon Technologies is an N-channel power MOSFET rated at 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 4.3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF7756
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
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