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Rochester Electronics, LLCDirectFET™ Isometric SHRoHS

IRF6665TRPBF

IRF6665 - 12V-300V N-CHANNEL POW

IRF6665TRPBF by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

DirectFET™ Isometric SH

Series

HEXFET®

Status

Active

Price available on request

MOQ: 665 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIRF6665TRPBF
Package / CaseDirectFET™ Isometric SH
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)62mOhm @ 5A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)13 nC @ 10 V
Input Capacitance (Ciss)530 pF @ 25 V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Drive Voltage10V
Supplier Device PackageDIRECTFET™ SH
RoHSRoHS
Part StatusActive

Application & Notes

IRF6665TRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric SH package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 62mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs62mOhm @ 5A, 10V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta), 19A (Tc)

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