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Vishay SiliconixTO-220-5RoHS

IRCZ24PBF

MOSFET N-CH 55V 17A TO220-5

Subcategory

Transistors Fets Mosfets Single

Package

TO-220-5

Series

HEXFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelIRCZ24PBF
Package / CaseTO-220-5
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)100mOhm @ 10A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)24 nC @ 10 V
Input Capacitance (Ciss)720 pF @ 25 V
Power Dissipation (Max)60W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220-5
RoHSRoHS
Part StatusObsolete

Application & Notes

IRCZ24PBF by Vishay Siliconix is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs100mOhm @ 10A, 10V
Power Dissipation (Max)60W (Tc)
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds720 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C17A (Tc)

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