IQE013N04LM6ATMA1
MOSFET N-CH 40V 31A/205A 8TSON
Transistors Fets Mosfets Single
8-PowerTDFN
OptiMOS™
Active
$3.10 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IQE013N04LM6ATMA1 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 1.35mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2V @ 51µA |
| Gate Charge (Qg) | 55 nC @ 10 V |
| Input Capacitance (Ciss) | 3900 pF @ 20 V |
| Power Dissipation (Max) | 2.5W (Ta), 107W (Tc) |
| Supplier Device Package | PG-TSON-8-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IQE013N04LM6ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.35mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IQE013N04LM6ATMA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 51µA |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 107W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 205A (Tc) |
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