PC
Rochester Electronics, LLCTO-247-4RoHS

IPZ60R037P7XKSA1

MOSFET N-CH 650V 76A TO247-4

IPZ60R037P7XKSA1 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-4

Series

CoolMOS™ P7

Status

Obsolete

$5.25 / unit (market reference)

MOQ: 58 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIPZ60R037P7XKSA1
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)37mOhm @ 29.5A, 10V
Vgs(th) (Max)4V @ 1.48mA
Gate Charge (Qg)121 nC @ 10 V
Input Capacitance (Ciss)5243 pF @ 400 V
Power Dissipation (Max)255W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO247-4
RoHSRoHS
Part StatusObsolete

Application & Notes

IPZ60R037P7XKSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 37mOhm @ 29.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1.48mA
Rds On (Max) @ Id, Vgs37mOhm @ 29.5A, 10V
Power Dissipation (Max)255W (Tc)
Gate Charge (Qg) (Max) @ Vgs121 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds5243 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C76A (Tc)

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