PC
Rochester Electronics, LLCTO-251-3 Short Leads, IPak, TO-251AARoHS

IPU50R950CEBKMA1

MOSFET N-CH 500V 4.3A TO251-3

IPU50R950CEBKMA1 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Series

CoolMOS™ CE

Status

Discontinued at Digi-Key

$0.16 / unit (market reference)

MOQ: 1876 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIPU50R950CEBKMA1
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)950mOhm @ 1.2A, 13V
Vgs(th) (Max)3.5V @ 100µA
Gate Charge (Qg)10.5 nC @ 10 V
Input Capacitance (Ciss)231 pF @ 100 V
Power Dissipation (Max)34W (Tc)
Drive Voltage13V
Supplier Device PackagePG-TO251-3
RoHSRoHS
Part StatusDiscontinued at Digi-Key

Application & Notes

IPU50R950CEBKMA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 950mOhm @ 1.2A, 13V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 100µA
Rds On (Max) @ Id, Vgs950mOhm @ 1.2A, 13V
Power Dissipation (Max)34W (Tc)
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds231 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)13V
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.