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Infineon Technologies8-PowerSFNRoHS

IPT65R033G7XTMA1

MOSFET N-CH 650V 69A 8HSOF

IPT65R033G7XTMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerSFN

Series

CoolMOS™ C7

Status

Last Time Buy

$20.52 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPT65R033G7XTMA1
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)33mOhm @ 28.9A, 10V
Vgs(th) (Max)4V @ 1.44mA
Gate Charge (Qg)110 nC @ 10 V
Input Capacitance (Ciss)5000 pF @ 400 V
Power Dissipation (Max)391W (Tc)
Drive Voltage10V
Supplier Device PackagePG-HSOF-8-2
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

IPT65R033G7XTMA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 33mOhm @ 28.9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1.44mA
Rds On (Max) @ Id, Vgs33mOhm @ 28.9A, 10V
Power Dissipation (Max)391W (Tc)
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C69A (Tc)

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