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Infineon Technologies8-PowerSFNRoHS

IPT60R055CFD7XTMA1

MOSFET N-CH 600V 44A 8HSOF

IPT60R055CFD7XTMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerSFN

Series

CoolMOS™ CFD7

Status

Active

$9.57 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPT60R055CFD7XTMA1
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)55mOhm @ 15.1A, 10V
Vgs(th) (Max)4.5V @ 760µA
Gate Charge (Qg)67 nC @ 10 V
Input Capacitance (Ciss)2721 pF @ 400 V
Power Dissipation (Max)236W (Tc)
Drive Voltage10V
Supplier Device PackagePG-HSOF-8-1
RoHSRoHS
Part StatusActive

Application & Notes

IPT60R055CFD7XTMA1 by Infineon Technologies is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 55mOhm @ 15.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 760µA
Rds On (Max) @ Id, Vgs55mOhm @ 15.1A, 10V
Power Dissipation (Max)236W (Tc)
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds2721 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C44A (Tc)

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