PC
Rochester Electronics, LLCTO-251-3 Stub Leads, IPakRoHS

IPSA70R950CEAKMA1

MOSFET N-CH 700V 8.7A TO251-3

IPSA70R950CEAKMA1 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Stub Leads, IPak

Status

Not For New Designs

$0.29 / unit (market reference)

MOQ: 1039 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIPSA70R950CEAKMA1
Package / CaseTO-251-3 Stub Leads, IPak
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)700 V
Rds On (Max)950mOhm @ 1.5A, 10V
Vgs(th) (Max)3.5V @ 150µA
Gate Charge (Qg)15.3 nC @ 10 V
Input Capacitance (Ciss)328 pF @ 100 V
Power Dissipation (Max)94W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO251-3-347
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

IPSA70R950CEAKMA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Stub Leads, IPak package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 950mOhm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 150µA
Rds On (Max) @ Id, Vgs950mOhm @ 1.5A, 10V
Power Dissipation (Max)94W (Tc)
Gate Charge (Qg) (Max) @ Vgs15.3 nC @ 10 V
Drain to Source Voltage (Vdss)700 V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8.7A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.