IPS70R950CEAKMA1
MOSFET N-CH 700V 7.4A TO251
Transistors Fets Mosfets Single
TO-251-3 Stub Leads, IPak
CoolMOS™
Last Time Buy
$0.98 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPS70R950CEAKMA1 |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 700 V |
| Rds On (Max) | 950mOhm @ 1.5A, 10V |
| Vgs(th) (Max) | 3.5V @ 150µA |
| Gate Charge (Qg) | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) | 328 pF @ 100 V |
| Power Dissipation (Max) | 68W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PG-TO251-3-11 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
IPS70R950CEAKMA1 by Infineon Technologies is an N-channel power MOSFET rated at 700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Stub Leads, IPak package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 950mOhm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPS70R950CEAKMA1
Alternatives & Replacements
View All →NTD4906N-35G
MOSFET N-CH 30V 10.3A/54A IPAK
NTD65N03R-35G
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IPS70R1K4CEAKMA1
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FDU6682
N-CHANNEL POWER MOSFET
NTD4863N-35G
MOSFET N-CH 25V 9.2A/49A IPAK
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Super Junction |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| Power Dissipation (Max) | 68W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
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