IPN50R950CEATMA1
MOSFET N-CH 500V 6.6A SOT223
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
CoolMOS™ CE
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPN50R950CEATMA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Rds On (Max) | 950mOhm @ 1.2A, 13V |
| Vgs(th) (Max) | 3.5V @ 100µA |
| Gate Charge (Qg) | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) | 231 pF @ 100 V |
| Power Dissipation (Max) | 5W (Tc) |
| Drive Voltage | 13V |
| Supplier Device Package | PG-SOT223 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IPN50R950CEATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 950mOhm @ 1.2A, 13V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPN50R950CEATMA1
Alternatives & Replacements
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MOSFET N-CH 600V 120MA SOT223-4
BSP135L6906HTSA1
MOSFET N-CH 600V 120MA SOT223-4
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
| Power Dissipation (Max) | 5W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
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